| 摘要 |
PURPOSE:To enable the attainment of excellent heat resistance and reliability, by forming a high-melting silicide layer between a transition metal silicide layer and a wiring layer on an Si substrate. CONSTITUTION:A high-melting metal silicide layer 8 composed of WSi2, MoSi2 or the like is formed between a transition metal silicide layer 6 and a wiring layer 5 on an Si semiconductor substrate 1 so as to suppress the interdiffusion of Si and Al between the layers 6 and 5. Since WSi2 or the like is thermally stable in this case, no Si is extricated from the layer 8 and no reaction occurs between the substrate 1 and the layers 6 and 8 and between these layers in heat treatment. Moreover, no reaction occurs between the layers 8 and 5 at a temperature hot higher than 500 deg.C, and in most of methods of manufacturing Si semiconductor devices, heat treatment at a temperature of 500 deg.C or above is not applied practically after wirings are formed. Furthermore, since the melting point of the layer 8 is at 1,300 deg.C or above and the diffusion constant of atoms in the layer 8 is small, the mutual-diffusion of Si in the layer 8 and Al in the layer 5 does not occur.
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