发明名称 ETCHING METHOD AND DEVICE FOR CRYSTAL BLANK WAFER
摘要 PROBLEM TO BE SOLVED: To realize highly accurate setting and to improve workability in a method for simultaneously etching/working a plurality of crystal blank wafers and adjusting/setting a resonance frequency. SOLUTION: A first electrode 4 and a probe 5 are immersed in etching solution 1a. The probe 5 has the watertight structure of a mode, where only the center area of a monitoring crystal blank wafer 13 to which a second electrode 14 is jointed is exposed to etching solution 1a. A measuring instrument 6 applies sweeping signals to the first electrode 4 and the second electrode 14 through respective conductors 7 and 15 and measures resonance frequencies which are obtained time-sequentially. When the measured resonance frequency becomes a value corresponding to the target resonance frequency of a plurality of crystal blank wafers 3 which are set in a basket 2, the basket 2 is pulled up and etching work is terminated. Since the frequency is adjusted while recognizing an etching state, management which is clearly more accurate and more adaptive than a former experienced time management system is realized.
申请公布号 JPH11234073(A) 申请公布日期 1999.08.27
申请号 JP19980170690 申请日期 1998.06.03
申请人 FRANZ L SAUERLANDO 发明人 FRANZ L SAUERLANDO
分类号 G01R1/06;C30B33/00;G01N17/00;H03H3/04 主分类号 G01R1/06
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