| 摘要 |
PURPOSE:To offer a large capacity nonvolatile semiconductor memory device which is low in power consumption, high in speed, also has no mechanical moving part and has a high reliability, by realizing an extremely low electric power of a dynamic type semiconductor memory, and forming as one body a solid or thin film battery and a power source use capacitor. CONSTITUTION:Nonvolatility of this semiconductor file memory is attained by a battery 31 and automatic refreshing circuits 32, 33 driven by this battery. A switch 34 is turned off when it is unnecessary to hold the stored contents, and consumption of the battery is prevented. A refresh timer 32 outputs a refresh signal at every prescribed time, and when the refresh signal comes, a switch 35 transmits contents of a refresh address register 33 to a driving circuit 36, and executes a refresh of some part of an element in accordance with contents of a refresh address. Also, 32 is a refresh time whose oscillation frequency becomes high when a temperature becomes high, supplies substrate bias voltage of a memory element by the battery, and by using a dynamic memory element by a COMS technology, power consumption in case of holding an information is reduced.
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