| 摘要 |
PURPOSE:To reduce an interaction between transfer paths by providing a different ion implanting layer on a part of the transfer path against a bubble transfer direction, in an ion implanting bubble device utilizing a charged wall formed by an ion implanting. CONSTITUTION:20,21 and 22, and 23,24 and 25,26, and 27,28 denote disk patterns, ion implanting layers by which a bubble is transferred, and bubbles, respectively. First of all, a shallow ion implanting layer is formed on the whole surface of a crystal, subsequently, transfer paths 20,21 and 22 are formed by using Au, a resist, etc., and thereafter, an ion implanting is executed, and subsequently at least one of a film thickness, a lattice distortion, and an induced anisotropy magnetic field of the ion implanting layers 23,24 and 25,26 is controlled by ion implanting or etching by using a mask pattern having windows 30, 31. A titled device is formed in this way, therefore, mismatch of a transfer characteristic by an interaction between the transfer paths coming from a three-fold symmetry of an easy axis of a bubble crystal can be reduced by an ion implanting layer formed by a different condition by the transfer direction of the bubble.
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