| 摘要 |
<p>The method includes the steps of: on a wafer (1) of monocrystalline semiconductor material, forming a hard mask (9') of an oxidation-resistant material, defining first protective regions (7) covering first portions (21) of the wafer (1); and forming first trenches (10'') in the wafer (1). The first trenches are formed by two etching steps: firstly, the portions (8'') of the wafer (1) not covered by the hard mask (9') are isotropically etched, such as to remove the semiconductor material not only from the portions without a mask, but also partially below the first protective regions (7); then anisotropic etching is carried out. After forming second protective regions (30) incorporating the first protective regions (7), final trenches (16) are formed, and the semiconductor material of wafer (1) is oxidised, except for the portions (21) which are covered by the second protective regions (30), in order to form a continuous oxide region (22); after removal of the second protective regions (30), a monocrystalline layer (23) is grown epitaxially from the non-oxidised portions (21). <IMAGE></p> |
