METHOD AND APPARATUS FOR PRETREATING A SUBSTRATE, METHOD AND APPARATUS FOR PRETREATING A SUBSTRATE AND DEPOSITING A THIN METALLIC FILM THEREON

摘要

Deposition of continuous pin-hole free tellurium films with thicknesses to less than 150A on a suitable substrate is achieved by first pretreating the substrate prior to film deposition. Ion sputtering or bombardment of the substrate surface with an inert gas prior to tellurium evaporation creates a dense coverage of nucleation sites on the substrate which improves the adhesiveness and resistance to abrasion and oxidation of the deposited film while providing very thin pin-hole free films of uniform thickness and desired crystallite orientation.