发明名称 |
FORMATION OF THIN TITANIUM DISULFIDE FILM AT LOW TEMPERATURE |
摘要 |
PURPOSE:To form a thin titanium disulfide film on a substrate kept at a low temp. by carrying out film formation by a plasma chemical vapor-phase growing method using titanium tetrachloride and hydrogen sulfide as source gases. CONSTITUTION:A thin titanium disulfide film is formed on a substrate by a plasma chemical vapor-phase growing method using titanium tetrachloride and hydrogen sulfide as source gases. By this method a thin titanium disulfide film can be formed on a substrate kept at a low temp., so a polymer substrate, a semiconductor device or a solar cell can be used as the substrate. |
申请公布号 |
JPS59226173(A) |
申请公布日期 |
1984.12.19 |
申请号 |
JP19830097836 |
申请日期 |
1983.06.03 |
申请人 |
HITACHI SEISAKUSHO KK |
发明人 |
KANEBORI KEIICHI;ITOU YUKIO;KIRINO FUMIYOSHI;MIYAUCHI KATSUMI;KUDOU TETSUICHI |
分类号 |
H01M4/58;C01G23/00;C23C16/30;C23C16/50;C30B25/02;C30B29/46 |
主分类号 |
H01M4/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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