| 摘要 |
PURPOSE:To prevent dielectric breakdown of a film deposited by evaporation by irradiating an electron ray to the surface of a base plate in the stage of depositing a metal or ceramic by evaporation on the base plate by an ion plating device. CONSTITUTION:Al 3 is evaporated by an evaporating source 2 and oxygen is introduced into a vacuum chamber 1 through a pipe 6 in the case of depositing, for example, Al2O3 on a base plate 4 by evaporation in the chamber 1. The Al is ionized by an ionizing electrode 5 and is deposited on a base plate 4 biased negative. The film is coated on the plate 4 while thermoelectron is irradiated thereto from a filament 11. The electric charge electrified positive on the surface of the film is thus made neutral and the dielectric breakdown of the film is prevented. |
