发明名称 Frequency-stabilized semiconductor laser oscillator.
摘要 <p>The semiconductor laser comprises a semiconductor laser diode (100) with a first optical waveguide layer section (123), a first electrode (113) for injecting electric current to the first optical waveguide layer section (123), a second optical waveguide layer section (122) and a second electrode (114). The second optical waveguide layer section (122) is connected to the first optical waveguide layer section (123) and has a controllable refractive index. The second electrode (114) provides a control signal for controlling the refractive index of the second optical waveguide layer section (122). An electric circuit applies modulation signals to the first electrode (113) in order to modulate optical output from the semiconductor laser diode (100) and supplies control signals having a predetermined proportionate relation in amplitude and a predetermined phase difference with said modulation signals for every frequency to the second electrode (114). This semiconductor laser does not substantially fluctuate its oscillation frequencies even if the number of carrier electrons to be injected into the active layer is varied. </p>
申请公布号 EP0128297(A2) 申请公布日期 1984.12.19
申请号 EP19840103992 申请日期 1984.04.10
申请人 NEC CORPORATION 发明人 KAEDE, KAZUHISA;RANGU, HIROYOSHI
分类号 H01S5/00;H01S3/137;H01S5/0625;H01S5/227;(IPC1-7):01S3/13;01S3/19;01S3/10 主分类号 H01S5/00
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