| 发明名称 |
Method of forming large number of monocrystalline semiconductor regions on surface of insulator. |
| 摘要 |
<p>When forming a large number of monocrystalline silicon regions on an insulator sheet, a large number of island regions of polycrystalline silicon are connected to one another in a predetermined direction by connecting regions, and are sequentially melted and regrown in that predetermined direction.</p> |
| 申请公布号 |
EP0128581(A1) |
申请公布日期 |
1984.12.19 |
| 申请号 |
EP19840106729 |
申请日期 |
1984.06.13 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOBAYASHI, YUTAKA;FUKAMI, AKIRA;SUZUKI, TAKAYA |
| 分类号 |
H01L27/00;H01L21/20;H01L21/768;H01L21/86;(IPC1-7):01L21/20;30B13/34 |
主分类号 |
H01L27/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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