发明名称 |
Process for producing circular gallium arsenide wafer |
摘要 |
A process for producing a circular gallium arsenide wafer including the steps of growing a gallium arsenide single-crystal boule in the form of a longitudinal half of a cylinder by the boat method in such a manner that the intersection of the flat surface produced by the boat method and the plane vertical to the direction of crystal growth extends in a <110> direction, slicing the boule into wafers to expose a (100) plane or a plane inclined within 0.5 to 5 degress with respect to the (100) plane, assembling the resulting triangular-like wafers into a triangular-like prism, grinding the opposite edges of the flat surface of the outer periphery of the triangular-like prism of wafers in a direction in which the wafers are assembled; and separating the triangular-like prism into discrete circular wafers.
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申请公布号 |
US4488930(A) |
申请公布日期 |
1984.12.18 |
申请号 |
US19820382979 |
申请日期 |
1982.05.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KOE, KIYOHIKO |
分类号 |
H01L21/304;B24B1/00;B24B9/06;B28D5/00;C30B33/00;H01L29/06;(IPC1-7):C30B29/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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