发明名称 |
MANUFATURE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To separate a conductor or semiconductor electrically by a method wherein a groove is formed on a conductor or semiconductor by irradiating laser beams while any residual insulating material in the groove is removed by a solution containing fluoride or gas. CONSTITUTION:A light transmitting and conductive film 2 mainly comprising tin oxide added with halogen element is formed on overall surface of a light transmitting surface 1. A groove 13 is formed by irradiating and scanning laser beams from lower side to form an electrode 2 between each interelement region 31, 11. This substrate 1 and a conductor thereon are immersed in a solution diluted with water by 3-100 times e.g. 10 times i.e. 1/10 HF for 1sec - 3min, normally 30sec. The conductive film may be separated electrically to perfection since the tin oxide is hardly resolved into 1/10 HF while the residual product in the groove is easy to be resolved into the solution. |
申请公布号 |
JPS59225577(A) |
申请公布日期 |
1984.12.18 |
申请号 |
JP19830100674 |
申请日期 |
1983.06.06 |
申请人 |
HANDOUTAI ENERUGII KENKYUSHO:KK |
发明人 |
ITOU KENJI;WATABE SATSUKI;YAMAZAKI SHIYUNPEI |
分类号 |
H01L31/04;H01L27/142;H01L31/0224 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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