发明名称 MANUFATURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To separate a conductor or semiconductor electrically by a method wherein a groove is formed on a conductor or semiconductor by irradiating laser beams while any residual insulating material in the groove is removed by a solution containing fluoride or gas. CONSTITUTION:A light transmitting and conductive film 2 mainly comprising tin oxide added with halogen element is formed on overall surface of a light transmitting surface 1. A groove 13 is formed by irradiating and scanning laser beams from lower side to form an electrode 2 between each interelement region 31, 11. This substrate 1 and a conductor thereon are immersed in a solution diluted with water by 3-100 times e.g. 10 times i.e. 1/10 HF for 1sec - 3min, normally 30sec. The conductive film may be separated electrically to perfection since the tin oxide is hardly resolved into 1/10 HF while the residual product in the groove is easy to be resolved into the solution.
申请公布号 JPS59225577(A) 申请公布日期 1984.12.18
申请号 JP19830100674 申请日期 1983.06.06
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 ITOU KENJI;WATABE SATSUKI;YAMAZAKI SHIYUNPEI
分类号 H01L31/04;H01L27/142;H01L31/0224 主分类号 H01L31/04
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