| 摘要 |
PURPOSE:To form the title device which can effectively restrain, only by means of a short-circuit electrode, the parasitic thyristor effect due to a doubly diffused region frequently used for cross wiring. CONSTITUTION:An N type Si epitaxial layer 12 is formed on a P type Si semiconductor substrate 11, and an island region 14 is formed by selectively diffusing a P<+> type isolation region 13 and thus P-N-isolating the epitaxial layer 12. In this island region 14, a resistor region serving as a P type diffused region 16 and a double diffused region 17 for cross wiring consisting of a P type region and an N<+> type region provided in proximity are formed, and lead-out electrodes 18 shown by dot lines are formed at both ends of the regions 16 and 17. The lead- out electrodes 18 at both ends of the region 17 comes to ohmic contact so as to short-circuit the P type region with the N<+> type region. A short-circuit electrode 19 is provided in the neighborhood of the center of the region 17 wherein the potential most increases and at the part close to the region 16. Such a structure enables to completely restrain the PNPNPN parastitic thyristor effect formed between the regions 16 and 17 by means of the short circuit electrode 19.
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