| 摘要 |
PURPOSE:To improve the accuracy of processing fine patterns by using a copolymer containing polysiloxane or siloxane instead of an intermadiate layer in a multilayer resist system. CONSTITUTION:A positive photo resist 8 (the first film) is applied on an Al-Si alloy film 7 for wiring an MOS transistor on an Si substate, and further a polyvinylmethylsiloxane film (the second film) 9 having the molecular weight of 150,000 is applied thereon. Next, said film 9 is made thermally fluid by baking treatment, and accordingly the film surface is flattened. Besides, the entire surface is irradiated with far ultraviolet rays, the film thus being hardened. Then, the entire surface is coated with positive resist, and a desired resist pattern 10 is formed by a normal process of lithography. At this time, the thickness of the resist film becomes uniform because of the flatness of the surface of the base, thereby enabling to form a resist pattern of a high accuracy and a high resolution. As a result, the accuracy of processing the matter to be processed improves.
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