| 摘要 |
PURPOSE:To remove the change of the smear correcting quantity, and to remove surely the smear of a solid-state image pick-up element by a method wherein a smear correcting means is formed inside of the solid-state image pick-up element. CONSTITUTION:Empty transfer regions EG of at least a half bit, first gate regions RLG to obtain the referential potential, and second gate regions SLG to obtain potentials corresponding to smear levels are provided between vertical shift registers VR and a horizontal shift register 1C, and smear level detecting regions 11 and control regions 30 to control the referential potential from the outside are provided. Electric charges corresponding to the transferred smear components are transferred to the smear level detecting regions, and by controlling potentials of the second gate regions according to the smear quantities, potential barriers corresponding to the smear quantities are formed between the first gate regions and the second gate regions, and by making depth of the referential potential changably, the electric charge quantities to be left in the first gate regions are made controllably.
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