| 摘要 |
PURPOSE:To prevent the short circuit of wires, by cutting a wafer under the state a protecting film, which is formed on the surfaces of element regions at the stage of the wafer, is provided on the surface of the boundary of an element, thereby securing a protecting insulating film on the periphery of a semiconductor substrate even at a pellet stage. CONSTITUTION:Element regions 8 are formed on the surface of an Si substrate 1. After electrodes 6 are formed, a surface protecting film 2 is formed on the entire surface. Hot etching is performed so that terminal parts 6 are exposed. Cutting is performed for scribe areas 1A by the dicing machining by a blade 9. A wafer is separated into pellets 1a, 1b.... By using a wire bonder 10, the pad 6 and a lead 4 are connected by a wire 5. Then, the defect of short circuit due to the contact of the wire 5 and the substrate can be prevented. |
