METHOD OF PRODUCING HIGH RESISTANCE LAYER HAVING LOW RESISTANCE TEMPERATURE COEFFICIENT

摘要

A method of manufacturing a semiconductor device having a resistive layer with a low temperature coefficient of resistance. The method comprises the steps of providing a semi-insulating film (6) comprising silicon crystallites embedded in a silicon dioxide matrix, preferably made by chemical vapor decomposition of a mixture of sane (SiH4) and vitrous oxide (N2O). The film is at least partly converted into a resistive layer (2) by implanting ions of arsenic or phosphorus in the film. The film is heated at about 900 DEG C and provided with electrode regions (3, 4).