FORMING METHOD OF P TYPE LAYER CONSISTING OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To reduce killer centers in an optical device by keeping the temperature of a compound semiconductor substrate crystal on the implantation of Be ions at 300 deg.C or higher and keeping the annealing treatment temperature of the substrate crystal at 800 deg.C or lower. CONSTITUTION:The temperature of a substrate crystal on the implantation of Be ions must be kept at least 300 deg.C or higher. However, a heating temperature is determined properly according to the kinds of the III-V group compound semiconductor substrate crystals implanted so that loss by the sublimation of constituents is not generated. At least 500 deg.C is needed in order to remove lattice defects in the substrate crystal as an annealing temperature. A temperature higher than 800 deg.C is improper because Be deviates remarkably on GaAs.