| 摘要 |
PURPOSE:To prevent the generation of defectives by forming the inner wall of a vessel and the surface of a structure in the vessel in a production unit for an amorphous silicon film by Ta, Mo, Ni, Cr, W, Nb, Ti, V, Zr, Mn, Pt, Si, or these alloys, oxides or nitrides. CONSTITUTION:In a reactive sputtering device consisting of a sealed vessel 1 made of stainless or glass, a target electrode shielding plate 3, a shutter 4, a sample substrate holder 5, a silicon target 6, a high-frequency power supply 7, a sample substrate 8, an exhaust system 9 and an atmosphere gas introducing port 10, the inner wall 2 of the vessel, the shielding plate 3, the shutter 4 and the holder 5 are formed by a metal having excellent adhesive properties with amorphous silicon. Ta, Mo, Ni, Cr, W, Nb, Ti, V, Zr, Pt, Mn, Si or these alloys, oxides or nitrides are used as the metal. |
