| 摘要 |
PURPOSE:To make the uniformity of film thickness and film quality and mass production compatible with each other by cylindrically constituting a wafer holder and arranging a large number of wafers to be treated along the inner wall surface of the holder. CONSTITUTION:A large number of wafers are arranged to the inner wall surface of a holder 14, and SiH4 gas is fed between a shielding cylinder 12 and the inner wall surface of the holder from a lower section. The holder 14 can be turned while the wafers 16 are fitted to the inside. Not only the number of the wafers charged can be made sharply larger than conventional devices but also the uniformity of film thickness and film qualty is excellent even in one wafer or among a plurality of the wafers.
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