发明名称 DYNAMIC RANDOM ACCESS MEMORY DEVICE
摘要 PURPOSE:To form a control signal having high accuracy, stability and sureness by introducing the control signal to a DRAM by a clock signal using a delay device. CONSTITUTION:A write enable signal -WE as the control signal to the DRAM is outputted from an NAND gate 25, a row address strobe signal -RAS is outputted from an AND gate 21 and a column address strobe signal -CAS is outputted from an NAND GATE 22 respectively. A latch circuit forming the control signals like those is controlled by a clock signal CK or CKD1. Then the clock signal CK is obtained by a device clock signal and the clock signal CKD1 is formed by the clock signal CK and the delay device 30. Thus the control signal having high accuracy, safety and sureness is formed in this way.
申请公布号 JPS59224986(A) 申请公布日期 1984.12.17
申请号 JP19840072558 申请日期 1984.04.11
申请人 SONY KK 发明人 MAAKU KURISUTOFUA KORINZU
分类号 G11C7/22;G11C8/18;G11C11/401;G11C11/407;H04N5/907;H04N5/937;(IPC1-7):H04N5/76;G11C11/34 主分类号 G11C7/22
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