| 摘要 |
PURPOSE:To prevent the yield of hot carriers and decrease in input efficiency, by forming a diode region comprising a P-N junction in addition to a well known transistor region, and bypassing an input voltage when the excessively high input voltage is applied based on the breakdown of a diode. CONSTITUTION:On a transistor pellet 1 made of single crystal silicon having impurities, an N type emitter region 2 and a P type base region 3 are formed. The region 2 and an electrode 4 are connected through a contact window 5. The region 3 and an electrode 6 are connected through a contact window 7. In addition, a P type region 8 is formed, and an N type region 9 is formed in said region. The region 8 and the region 2 are connected to the electrode 4 through a contact window 10. The region 9 and the region 3 are connected to an electrode 5 through a contact window 12. A resistance material 14, which limits a current flowing through a diode region ecomprising the P type region 8 and the N type region 9, is provided. |
