| 摘要 |
PURPOSE:To reduce the loss caused by light absorption in a semiconductor layer, by reflecting the light rays of projected light rays, which are not utilized for generation of holes and electrons in an I type semiconductor layer again, and introducing the light rays into the I type semiconductor layer. CONSTITUTION:On an I type semiconductor layer 30 of an non-single-crystal semiconductor, P or N type semiconductor layers 29 and 30 are provided. Impurities are mixed at a ratio of H2/silicide gas = 3-30, and electric or optical energy is applied in a reaction furnace, whose internal pressure is 1 atm or less. In this mixed layer, the surface has an amorphous component including a large amount of impurities such as oxygen at a pitch of 30-2,000Angstrom . The surface is made to be an uneven surface, a fibrous surface, or a needle shaped surface. Light is irregularly reflected by this interface. As a result, the light path is made long. |
