| 摘要 |
PURPOSE:To enable formation of a fine resist image with high sensitivity and application of the resist to a process requiring high density for a semiconductor integrated circuit, etc. by using a polymer made from a specified trioxabicyclo compd. as a structural unit, and specified in weight average mol.wt. CONSTITUTION:A polymer to be used as an essential component contains a trioxabicyclo compd. represented by the general formula shown here where R is alkyl as a structural unit, and has a weight average mol.wt. of 10-1,000 thousand. Since said compd. is high in sensitivity to ionizing radiation, it shortens a time necessary for exposure to electron beams and X-rays, and when it has a mol.wt. of <=1,000, its sensitivity to said radiation becomes insufficient, and when >=1 million, resolution is lowered by swelling occurring during development, and further, problems occur also in respects of solubility and coating performance. |
