SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to minimize a substrate noise of a memory cell array by adding substrate voltage applying lines applying a substrate voltage in the memory cell array area of a semiconductor substrate. CONSTITUTION: The device includes a semiconductor substrate, a plurality of word lines(WL1,WL2,WL3,...) and bit lines(BL1,BL2,BL3...), a memory cell array, and a plurality of the first and second substrate voltage applying lines. The memory cell array has a structure in which a plurality of memory cells connected between the word lines and the bit lines are divided by a block unit and arranged in the semiconductor substrate. The plurality of the first substrate voltage applying lines are arranged between blocks of the memory cell array and applies a substrate voltage to the semiconductor substrate area between the blocks. The plurality of second substrate voltage applying lines are arranged inside of blocks of the memory cell array and applies a substrate voltage to the semiconductor substrate area inside of the blocks.