| 摘要 |
PURPOSE:To obtain a P-I-N diode pellet having small capacitance and low-operation resistance by forming an approximately mushroom-shaped projecting electrode to a reverse conduction type impurity layer plane-combining in parallel with a main surface and reducing the diameter of the joining of the electrode. CONSTITUTION:A P<+> layer 13 and an SiO2 film 14 form approximately the same plane in their main surfaces, the P<+> layer 13 extends to the N<->VG layer 11 side in approximately 1.0mum diffusion depth from the main surface, and the SiO2 film 14 surrounding the P<+> layer 13 extends to the N<->VG layer 11 side in approximately 1.2mum extension depth from the main surface. A surface electrode 15 is formed on the P<+> layer 13 while an annular region intruding by approximately 20mum from the periphery of the layer 13 is exposed. Approximately a mushroom- shaped projecting electrode 16 is formed on the surface electrode 15 so as to coat the upper section of the SiO2 film 14. The projecting electrode 16 is shaped by the quality of a material such as Ag, and a back electrode 17 consisting of AuGe-Au is formed on the exposed back side of an N<+> semiconductor substrate 12. Accordingly, the capacitance of the peripheral section of the joining of a P-I- N diode pellet 20 can be brought to zero, and the diameter of its joining can be reduced efficiently. |
