| 摘要 |
PURPOSE:To keep approximately the whole region on a semiconductor integrated device at uniform potential by connecting an emitter region between inverter transistors opposite to both surfaces in the longitudinal direction of an injector region by a high concentration layer, i,e. a low resistance layer. CONSTITUTION:N type forming layers 500 are disposed in an injector region 100. The N type forming layers 500 are arranged so as to connect an N type forming layer 200 in transistors Q1-Q8 and an N type forming layer 200' in transistors Q10-Q80. The forming layers 500 in high concentration formed in this manner reticulately connect grounding regions 300, 200, 200' for each flip- flop, the grounding regions for each flip-flop are kept at approximately uniform grounding potential, and a stable logical circuit is obtained.
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