| 摘要 |
PURPOSE:To isolate a LD, a transistor as a driving element for the LD and a P-I-N APD as a light-receiving element electrically completely by forming a semiconductor substrate and a semiconductor layer and integrating an electrical element to the semiconductor layer. CONSTITUTION:An InGaAsP four-element layer 302 called an active layer, a P type InP layer 303 called a P clad layer and a P type InGaAsP layer 304 called a cap layer are grown on an N type InP substrate 301 in an epitaxial manner in succession. The cap layer 304, the P clad layer 303 and the active layer 302 are etched selectively. An insulating film 306 is formed so as to coat projecting sections (LD sections). The insulating film 306 is deposited by using a CVD method in order to also form the insulating film 306 to the vertical sections of the projecting sections. Sections required as electrical devices on polycrystalline silicon layers 307 are changed selectively into single crystals or the whole surface into single crystal by the irradiation of energy rays, thus obtaining single crystal layers 308. |
