| 摘要 |
PURPOSE:To contrive to upgrade the processing precision on a contact hole and the processing precision on metal patterns by a method wherein after rough patterns generated by treating a crystal substrate were flatened by using spacer patterns and insulating material for embedding, the metal wiring patterns are processed by performing a performation processing on the patterns. CONSTITUTION:A source drain 101 and gate metal patterns 102 are formed on a GaAs crystal substrate 1 and spacer patterns 10 consisting of an insulating material of a nearly same height as these metal patterns 102 are formed without overlapping with the metal patterns 102. A liquid state-insulating material 11 is applied to the crystal surfaces. The material 11 is brought into a solid state while filling gaps G and the surfaces are flatened. By performing a perforation processing on the formed interlayer insulating layers 10 and 11, a second layer- metal pattern 201 is formed. Space patterns 20 consisting of an insulating material of a nearly same thickness as this are formed by performing a processing, and insulating material 21 for flatening and embedding is formed for being used as second interlayer insulating layers 20 and 21. By performing a processing for a contact hole on the second interlayer insulating layers 20 and 21, a third layer- metal pattern 301 is formed. |
