发明名称 |
Edge stress reduction by noncoincident layers |
摘要 |
The stress at the edges of a thin film conductor can be reduced by noncoincident layered structures, which takes advantage of the characteristic stress polarity changing from tensile to compressive or vice versa in the edge vicinity in order to avoid device reliability and performance problems. By using noncoincident layered structures, destructive stress interference from different layers can be achieved to reduce the stress or stress gradient at the edge. The structures and methods disclosed herein can advantageously be used in many integrated circuit and device manufacturing applications (including gates, wordlines, and bitlines).
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申请公布号 |
US2001001724(A1) |
申请公布日期 |
2001.05.24 |
申请号 |
US20000738001 |
申请日期 |
2000.12.14 |
申请人 |
KWOK SLANG PING;RICHARDSON WILLIAM F.;ANDERSON DIRK N. |
发明人 |
KWOK SLANG PING;RICHARDSON WILLIAM F.;ANDERSON DIRK N. |
分类号 |
H01L21/28;H01L29/423;H01L29/49;(IPC1-7):H01L21/320;H01L21/44;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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