| 摘要 |
PURPOSE:To enable to remove contamination in an MOSLSI equipped at least with either of CCC and metal gatrs by a method wherein a layer having gettering action is formed into a substrate. CONSTITUTION:A high density phosphorus diffusion layer 12 is formed on the back side of a silicon substrate. After an oxide film 13 has been grown, an SiN7 and a thermal oxide film 6 are removed, an oxidation is performed in a dry oxygen atmosphere, and a gate oxide film 14 is grown on a substrate 1. W is deposited, and after a pattern 15 to be turned to a gate has been formed, As is injected, PSG16 is deposited, an annealing is performed in a dry nitrogen atmosphere, and a source and drain region 17 is formed. As the contamination, which is introduced when a processing is performed on a hole formed on the substrate, and the contamination and the like introduced when a metal gate is being heated in a dry nitrogen atmosphere are gathered by a high density phosphorus diffusion layer 12, the increase of junction leak current of the source and drain can be prevented effectively. |
