| 摘要 |
PURPOSE:To prevent short-circuits due to impacts to generate at the time of wire-bonding process as well as to contrive to upgrade the yield for a semiconductor device and to enhance the reliability thereof by a method wherein a first metal film for cracking prevention is formed at the bonding pad region of a semiconductor substrate through a first insulating film, and a bonding pad consisting of a second metal film is formed thereon through a second insulating film. CONSTITUTION:A first field oxide film 22 is formed on a semiconductor substrate 21 formed with each prescribed region, such as a diffusion layer, etc., and a first metal film 23 consisting of a member, which has been added a silicon to an aluminum, is formed on the upper surface thereof. The first metal film 23 is patterned so as to be left at the programming part for forming a bonding pad. A second metal film 25 consisting of a member, which has been added a silicon to an aluminum, is laminatedly formed on the whole surface of a wafer, and the second metal film 25 is connected with the prescribed part of the wafer, and at the same time, is performed a patterning. A passivation film 26 consisting of a PSG film is coated on the wafer and an opening part 27 is provided at the passivation film 26 on a bonding pad 25b to make the metal film 25 expose. After that, this wafer is performed a forming treatment (thermal treatment). |
