| 摘要 |
PURPOSE:To reduce the occupying area of a semiconductor proper, and to improve the degree of integration of an integrated circuit remarkably by connecting one main electrode and a control electrode in an area on a semiconductor surface on an active region. CONSTITUTION:A source electrode 3 and a gate electrode 5 are formed adjacent onto the surface of a semiconductor proper 1 on an active region 2 while the source electrode 3 and the gate electrode 5 are connected in an area on at least the active region to shape a connecting region 6. It is preferable that the connecting region 6 is formed in the area on the active region 2 in a Schottky-gate field-effect transistor at that time though it depends upon the relationship of size among each of the source electrode 3, the gate electrode 5 and the active region 2. The connecting region 6 may protrude from the area on the active region 2. The source electrode 3 and the gate electrode 5 are connected so that the source electrode 3 partially overlaps on the upper side of the gate electrode 5, but various fitted connecting modes can be employed as required. |
