| 摘要 |
PURPOSE:To enable to efficiently form a microscopic pattern by a method wherein an etching is preferentially performed on the layer film to be processed which is exposed by performing a uniform etching on high molecular resin. CONSTITUTION:An organic pattern 2 is formed on the surface of an Si substrate 1. Besides, an Au film 3 is formed thereon as a layer to be processed. Then, an organic film resist 4 is applied on the layer 3 to be processed, the openings in the film 3 are filled up with the resist 4, and a flat surface is formed. An ion milling is performed until the Au film is removed. As the ion milling speed of the resist 4 is one third of that of Au, the Au film can be removed preferentially. The resist 4 and the pattern 2 remained in the final stage are removed using oxygen plasma. As the Au film is not changed by oxygen plasma, it is left on the Si substrate as a pattern 6. |
