| 摘要 |
An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm<-><1>, 1,140 cm<-><1>, 1,040 cm<-><1>, 650 cm<-><1>, 860 cm<-><1> and 800 cm<-><1> and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm<-><1> and 2,100 cm<-><1> and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time. |
