SPUTTERING VAPOR DEPOSITION DEVICE

摘要

PURPOSE:To form a film by vapor deposition on a sample at a uniform thickness distribution in the stage of forming said film on the sample placed on a rotary table by making the distance between a vapor source and the sample shorter on the outside circumferential side of the rotating surface and longer on the inside circumferential side. CONSTITUTION:A rotary table 22 is provided in a vacuum vessel 21 evacuated to a vacuum and plural semiconductor wafers 1 are arrayed on the circumference having a radius (r). Two sputtering guns 23, 24 are disposed as vapor deposition sources on the ceiling surface of the vessel 21 and are driven in parallel. The guns 23, 24 are so disposed that the line connecting the centers thereof has about 30-45 deg. angle relative with the circumferential tangent. The distance between the guns and the wafers 1 are so set that the distance d1 of the gun 23 on the inner side is longer and the distance d2 of the gun 24 on the outer side is shorter. The thickness of the film deposited by evaporation is thus made flat.