| 摘要 |
PURPOSE:To obtain the titled device of a long time of data holding and less consumed power by a method wherein one end connected to the data memory nodes of an MOS transistor and a selection MOS transistor in two MOS type inversion circuits constituting an FF circuit is composed of the laminated body of a semiconductor layer of a fixed conductivity type, a tunnel insulation layer thereon, and an electrode layer. CONSTITUTION:One semiconductor substrate is composed of P<-> type regions 41 and 51 sandwiching an N<-> type region 31, and the P-channel MOS transistors 21 and 22 are provided in the region 31. Gate electrodes 36 and 37 provided between respective diffused regions via gate oxide film, and drain electrodes 38 and 39 are formed on both sides of said electrode via extremely thin oxide film. N-channel MOS transistors 23 and 7 are provided in the region 41, and a common electrode 47 is formed on an N<+> type region 43 constituting those via tunnel oxide film. Besides, the N-channel MOS transistors 24 and 5 are provided in the region 51, and a common electrode 57 is formed on an N<+> type region 57 constituting those likewise via tunnel oxide film. |
