| 摘要 |
<p>The sensor has with a hook structure (n<+> region 8, p region 7, p<-> region 6 and n<+> region 5) for detecting radiant energy input information, a readout transistor (Q1) and a refresh transistor (Q2). The sensor is of wide dynamic range, high sensitivity, low noise and high image clarity and is capable of non-destructive readout of optical information. The impurity densities in the hook structure, their distribution profiles, materials of regions of the hook structure and their thicknesses are so selected as to optimize the carrier storage function of the hook structure, thereby permitting the non-destructive readout of the optical information. The ratio between the junction capacitance and the earth capacitance of a floating pn junction establishing a potential barrier in the hook structure is selected so that a stored voltage in the floating pn junction and the readout sensitivity may become maximum. By repeating non-destructive readout, an integrated value of the quantity of incident light is read out. The time interval to a first operation of the readout transistor (Q1) after the operation of the refresh transistor (Q2) is selected in accordance with the quantity of the incident light, by which an electric signal proportional to the quantity of the incident light can be read out.</p> |
