| 摘要 |
PURPOSE:To prevent the generation of a damage of a base film at etching of a polyimide resin coat by forming a thin polyimide resin coat on a base film formed on a semiconductor substrate and forming a thick polyimide resin coat on said thin coat. CONSTITUTION:A base film 11 is formed on a semiconductor substrate 10. Next, a thin polyimide resin coating film 12 of 5mum thick or less is formed on the film 11. If the thickness is over 5mum, a sufficient etching speed can not be obtained at etching process of the next process. Next, a thick polyimide resin coating film 13 of 30mum thick or over is formed on the film 12. Next, a negative organic photoresist 14 is formed on the film 13, which is subjected to patterning to obtain a mask 15 for etching. Then, etching of the films 12 and 13 is done using the mask 15. Next, the mask 15 is removed and a polyimide resin coating film 16, in which a circumferential plane at the foot of the film is a gentle slope and the plane rises steeply toward the upper, is formed on the film 11. Consequently, a heavy stress can be prevented from being applied to the film 11 at etching process of the film 16. |
