| 摘要 |
PURPOSE:To enable the dry etching without a damage by activating the second reactive gas introduced into a vacuum container together with the etching gas by projecting the light to the vicinity of the material to be etched. CONSTITUTION:A suscepter 22 for carrying a material to be etched 21 is arranged in a vacuum container 11 and a laser 9 is arranged on the container 11. The laser beam 13 is converged onto a material 21 and if the first reactive gas such as Cl2 has been introduced, Cl2 absorbs ions efficiently to produce active atoms of Cl. Meanwhile, the light 20 from a laser 18 is projected in parallel to the vicinity of the material 21. At this time, a wave length of the light 20 is predetermined differently from a wavelength of the light 13 and is predetermined so as to be resonant to a state of excitation of an additional gas as the second reactive gas to be introduced together with the first reactive gas, such as CCl4 gas, thereby dissociating only CCl4 gas selectively. Thus, the attack of Cl radical in lateral direction and undercutting can be prevented.
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