| 摘要 |
PURPOSE:To prevent the accumulation of negative charges to the surface of a semi-insulation substrate by a method wherein an electron ray resist layer is formed after forming a high conductive layer on the surface of said substrate, and thereafter an image is drawn directly with electron beams. CONSTITUTION:The high conductive layer 3 is formed on the scribe line of the GaAs semi-insulation substrate 1. Next, electron ray (EB) resist 4 is applied, the image is drawn directly with electron beams, and then an active layer window 4a is formed by development with developer. After Si ion implantation, an active layer 5 is formed by heat treatment. EB resist 6 is applied, the image is drawn directly with electron beams, and electrode windows 6a and 6b are formed by development. The source electrode 8 and the drain electrode 9 are formed by adhering a metallic film 7 and then removing the resist 6. EB resist 10 is applied, the image is drawn directly with electron beams, and thus an electrode window 10a is formed. A metallic film 11 is adhered, and the resist 10 is removed, thus forming the gate electrode 12. Super micro patterning to said substrate is enabled by the above-mentioned manufacture. |
