MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To shorten the time required for manufacturing a multilayer semiconductor device by repeating a process in which a support substrate corresponding to a positioning pattern in an active layer is removed, each surface of the active layers of first and second layers is aligned oppositely and fast stuck and coupled, a support substrate under the active layer of the second layer is rmoved to expose the back of the active layer of the second layer, and the back and the surface of the active layer of a third layer are opposed to each other. CONSTITUTION:A support substrate 10 to which the active layer 11 of a first layer is formed is installed on a stage 15, and the active layer 21 of a second layer shaped on a support substrate 20 is opposed to the active layer of the first layer while the active layer side is directed downward, and fixed to a moving device 17. Positioning patterns 209 in the active layer 21 of the second layer are conformed to positioning patterns 109 in the active layer 11 of the first layer through holes 214 bored to the support substrate to mutually align the active layers. Positioning is completed, metallic bumps for the active layer 11 of the first layer and metallic bumps for the active layer 21 of the second layer are fast stuck mutually, and diffusion-welded by applying pressure, thus completing a semiconductor device of two layers. The semiconductor device of two layers is extracted from 15 and 17, the support substrate 21 is removed, and a third active layer is laminated.