发明名称 Method of crystallizing amorphous silicon
摘要 A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.
申请公布号 US2002168577(A1) 申请公布日期 2002.11.14
申请号 US20020134480 申请日期 2002.04.30
申请人 YOON JIN-MO 发明人 YOON JIN-MO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):G03C5/04;G03C5/00;G03F9/00 主分类号 H01L21/20
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