| 摘要 |
PURPOSE:To contrive the increasing of yield voltage when a reverse bias is impressed by a method wherein a semiconductor region having one conductive type is formed on the surface of a semiconductor region having other conductive type and a semiinsulating compound semiconductor film is formed on the P-N junction in contact to these regions. CONSTITUTION:A P type region 2 has been formed by diffusion in an N type semiconductor substrate 1 and a semiinsulative semiconductor film 6 doped with oxygen and made of a semiinsulative crystalline gallium or arsenic, etc., has been formed on both the surfaces of the substrate 1 and the region 2 by chemical vapor-phase growth method in such a way as to directly cover the P-N junction, which is formed by the substrate 1 and the region 2. An ohmic current can be run to the interface between this semiinsulative semiconductor film 6 and the semiconductor substrate 1 or the P type region 2 through numerous trapping levels, which are generated by the lattice mismatching due to the disagreement of lattice constant or dangling bonds that exist in the crystal grains. Accordingly, the electric potential distribution in the semiinsulative semiconductor film 6 and that in the surface of the semiconductor substrate 1 at the time when a reverse bias is impressed coincide mutually, thereby enabling to obtain a high yield voltage. |
