| 摘要 |
PURPOSE:To enable to achieve a high performance self-aligning aluminum gate MOS having small size of an element by instantaneously annealing with a lamp to reduce a source-drain layer resistance and silicified source-drain diffused layer. CONSTITUTION:An insulation isolated region 2 is formed on a P type silicon substrate 1, a gate oxidized film 3 is formed on the surface of the substrate, and an aluminum gate electrode 4 is then formed. Then, arsenic ions 14 are implanted to form, for example an SiO2 or Si3N4 film 5 by a vapor phase growing method on the entire substrate. Thereafter, an instantaneous annealing of 5sec. at 900 deg.C is executed, for example, with a halogen lamp. The implanted arsenic is diffused to form a source-drain diffused layer. Subsequently, an insulating film 5 is anisotropically etched to form a side wall 7 of the film 5. Then, high melting point metal such as W, Ta, or Ti is covered, to form a silicified layer 8. Thereafter, an interlayer insulating film 9 is formed by a vapor phase growing method, a contacting hole 10 is then opened, and aluminum wirings 11 are formed. |
