| 摘要 |
PURPOSE:To enable to inspect the pattern size near an actual pattern, to facilitate the inspection and to improve the accuracy by dividing a pattern image into 3 or more signal regions, forming a pattern signal, and inspecting the pattern by a binary signal formed thereby. CONSTITUTION:A wafer 10 is formed with a plurality of chips in a matrix shape, and a photoresist 11 is patterned. A laser light source 13 is arranged obliquely upwardly, and a laser light is emitted to the surface of the wafer 10. When the surface of the chip 12a is scanned by a pattern detector 15a, an electric signal amount proportional thereto is provided. The detection signals Sa are respectively fed to comparators 20a1-20a3, which respectively compare them with reference signals S1, S2, and output an edge signal Sea, a lower ground signal Ssa and a pattern signal Spa. When edge + pattern signals Sepa, Sepb are produced from both signal forming units 19a, 19b, and compared by a comparator 21, the signals Sepa, Sepb are compared with signal width l1, l2 substantially equal to the real pattern size. |
