| 摘要 |
PURPOSE:To form a film of a reaction product having uniform film quality and thickness on the surface of a wafer by curving the showering surface in a reaction chamber, and injecting the 2nd gas to effect reaction while subjecting the 1st gas to a plasma discharge. CONSTITUTION:The bottom surface of a showering part 4 in a reaction chamber 1 is curved in such a way that the spacing H0 in the central part between the part 4 and a wafer 5 is large and that the spacings H1, H2 in the peripheral part are small. While the 1st gas such as H2 introduced into the chamber 1 is subjected to a plasma discharge, the 2nd gas such as SiH4 introduced through an introducing pipe 3 is injected from the part 4. The 1st gas and the 2nd gas introduced below the part 4 along the circumference on the side surface of the part 4 from the inside of the chamber 1 are brought into reaction and the reaction product such as Si2Ny is deposited on the surface of the wafer 5. The nonuniformity of the film quality in the radial direction of the wafer 5 is eliminated by the above-mentioned method. |
