| 摘要 |
PURPOSE:To enable to easily confirm and analyze the manufacturing process without the unnecessary increase of chip area by providing a checking pattern in a region not participated in field logic or memory. CONSTITUTION:The transistor for measuring threshold voltage is formed by utilizing a transistor region of e.g. an internal cell. A unit internal cell transistor 40 is composed of drain regions 41, 42, a source region 43, and two MOS transistors consisting of polycrystalline Si gate electrodes 44, 45. The drain region 41, source region 43, and polycrystalline Si gate electrode 44 therein are provided with contacts 46, respectively; thereby, leading out the electrode to external checking pads 47-49. In such a manner, the manufacturing process can be easily confirmed and analyzed by adding the checking patterns to detect various kind of manufacturing parameters of the titled device or to analyze the defect. |
