| 摘要 |
PURPOSE:To form amorphous silicon efficiently and continuously into films on plural substrates, by providing the first anteroom for preheating electrically conductive substrates and the second anteroom for cooling the substrates after forming the films in the upper and lower parts of a reaction vessel. CONSTITUTION:The interiors of the first and the second anterooms 23 and 25 provided in the upper and lower parts of a reaction vessel 21 are evacuated, and a current is passed through heaters 29 in an integrated unit 32 placed on a rising and lowering rod 27 in the first anteroom 23 to heat electrically conductive substrates 28 to a given temperature. The first gate valve 22 is then opened to raise and feed the integrated unit 32 into the reaction vessel 21 by the rising and lowering rod 27. The integrated unit 32 is then placed on a turntable 42, and the rising and lowering rod 27 is lowered to close the first gate valve 22 and form amorphous silicon films on the substrates 28. Another unit 32 is placed on the rising and lowering rod 27 to preheat the substrates 28. The first and second gate valves 22 and 24 are then opened to move the integrated unit 32 into the reaction vessel 21 by the rising and lowering rod 27, and the integrated unit 32 in the reaction vessel 21 is moved to the second anteroom 25 and cooled.
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