| 摘要 |
PURPOSE:To enhance the integration degree by forming the collector region, base region, emitter region and emitter electrode lead-out part by self-alignment. CONSTITUTION:Apertures 28 and 29 are formed in an Si semiconductor substrate, and an N type polycrystalline Si layer 30 is formed, and single crystal Si layers 31 and 31' are formed in the apertures 28 and 29, respectively. Next, the collector electrode lead-out part 33 is formed, and a thin oxide film 34 and a nitride film 35 are formed by adhesion. Then, a P type impurity is ion-implanted by scraping to the halfway of said layer 30 after adhering and flattening a photo resist 36. Said layer 30 not necessary is removed by etching, and annealing is performed by forming the base electrode lead-out part 38. After selectively forming an oxide film 39, the nitride film 35 is removed. A window is opened in the oxide film 39, the base region 48 is formed, thus being anneal-treated. A polycrystalline Si film 42 is formed, the surface is oxidized thinly, and an N type impurity is ion-implanted to the base region 48, thereafter the emitter region 47 is formed and anneal-treated. The base electrode 44, emitter electrode 45, and collector electrode 46 are formed. Thereby, the increase of performance and integration degree of the element is enabled.
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